Application Scenarios

In the field of nanomaterials and 2D materials research, accurate calibration of atomic-scale thin film layers is a key technological bottleneck to achieve performance tuning. USM-E is able to resolve the thickness and number of layers of thin films through its unique surface-sensitive electron interferometry technology. USM-E can accurately determine the monolayer closure of epitaxial growth and capture defect-induced local layer variations during film deposition (e.g., CVD, MBE) or etching processes. USM-E provides a standardized platform for calibrating the number of layers of ultrathin films with sub-Angstrom-level vertical resolution and nanometre-level lateral resolution for research and development, laboratory exploration to industrial production, integration.