Application Scenarios

In-situ chemical vapor deposition (CVD) offers significant advantages in material growth and characterization, especially in two-dimensional materials and applications in electronics, energy, and nanotechnology. USM-E in-situ characterization technology provides a powerful tool for real-time monitoring and analysis of materials. This technology enables real-time observation of material growth and structural changes during deposition, providing instant feedback to optimize deposition parameters and improve thin film quality.

Figure 1: In situ observation of the high-temperature CVD epitaxial growth reaction process of graphene on ruthenium (0001) crystal surface, sample temperature 1300 K.