As a biennial national academic conference, the 16th National Conference on Molecular Beam Epitaxy will be held in Changzhou from October 14 to 17, 2025. Organized by authoritative institutions such as the Semiconductor Materials Academic Committee of the China Nonferrous Metals Society and the Electronic Materials Branch of the China Institute of Electronics, this conference focuses on the forefront of MBE technology and its industrial applications, bringing together top experts from national research institutes, universities, and enterprises.
Surface Dynamic In Situ microscope Equipment Addresses Industry Pain Points
At the conference, Dr. Tang Wenxin, Chairman of the Suzhou AlSTech Co., Ltd. will deliver a keynote speech titled "In-situ Electron microscope in Molecular Beam Epitaxy and Its Applications," focusing on the use of in-situ surface electron microscope under ultra-high vacuum conditions in the fields of molecular beam thin films and two-dimensional materials. The presentation will also elaborate on the significance of Suzhou AlSTech Co., Ltd. domestically produced ultra-high vacuum surface electron microscope and energy spectroscopy in thin film research.
MBE-USM Integrated System.
To address the industry challenge of in-situ monitoring under ultra-high vacuum conditions for MBE technology, this system achieves three major breakthroughs:
(1) Multi-technology Convergence Innovation: Enables deep integration of MBE thin-film growth technology with in-situ electron microscope, combined with diffraction, PEEM, and XPS functionalities, to establish a full-chain characterization platform;
(2) Ultra-high spatiotemporal resolution: Utilizing low-energy coherent electron beam illumination, it achieves spatial resolution better than 2 nanometers and millisecond-level temporal resolution, enabling real-time capture of nanoscale dynamic processes such as step flow and island nucleation;
(3) Multi-domain Empirical Applications: The system has been successfully applied in the tomographic analysis of lithium atomic molecular beam epitaxy embedded in graphene, the epitaxial growth process of single-atom Cu, and surface reactions of GaAs semiconductors. In the future, it will further unlock cutting-edge research directions such as the exploration of growth mechanisms for two-dimensional topological materials.
We sincerely invite colleagues to discuss the future of technology
Dr. Tang Wenxin will focus on the in-situ growth of surface materials, two-dimensional materials, and III-V semiconductors using ultra-high vacuum surface microscope techniques in his presentation. We sincerely invite experts and scholars in semiconductor materials, nanotechnology, electronic devices, and related fields to attend and exchange ideas
Report Time: 10:30 AM – 10:45 AM, October 16, 2025
Venue: Renaissance Wancheng Hotel, No. 689 Lanyue Road, Xitaihu Science and Technology Industrial Park, Changzhou, Jiangsu Province, China
S8: In-situ Characterization and Intelligent Epitaxy - Lan Yu 1 Hall
(For details, please visit the conference website: https://www.mbe2025.com/)
We look forward to discussing topics such as equipment application scenarios, technical collaboration, and joint research with you on-site, jointly promoting the industrialization development of in-situ characterization technology for molecular beam epitaxy in China!
Contact for inquiries: Tang Wenxin, 188-1723-6602
Suzhou AISTech Co., Ltd
October 8, 2025